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PD-96930A
RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA)
Product Summary
Part Number Radiation Level RDS(on) IRHYS67134CM 100K Rads (Si) 0.09 IRHYS63134CM 300K Rads (Si) 0.09 ID 19A 19A
IRHYS67134CM 150V, N-CHANNEL
TECHNOLOGY
International Rectifier's R6 TM technology provides superior power MOSFETs for space applications. These devices have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy Transfer (LET) up to 90MeV/(mg/cm2). Their combination of very low RDS(on) and faster switching times reduces power loss and increases power density in today's high speed switching applications such as DC-DC converters and motor controllers. These devices retain all of the well established advantages of MOSFETs such as voltage control, ease of paralleling and temperature stability of electrical parameters.
Low-Ohmic TO-257AA
Features:
n n n n n n n n n n
Low RDS(on) Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Eyelets Electrically Isolated Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25C ID @ VGS = 12V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current A Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy A Avalanche Current A Repetitive Avalanche Energy A Peak Diode Recovery dv/dt A Operating Junction Storage Temperature Range Lead Temperature Weight For footnotes refer to the last page 19 12 76 75 0.6 20 67 19 7.5 7.8 -55 to 150
Pre-Irradiation
Units A
W
W/C
V mJ A mJ V/ns
o
C
g
300 (0.063 in. /1.6 mm from case for 10s) 4.3 (Typical)
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1
02/03/05
IRHYS67134CM
Pre-Irradiation
Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage BV DSS /T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current
Min
150 -- -- 2.0 12 -- -- -- -- -- -- -- -- -- -- -- --
Typ Max Units
-- 0.19 -- -- -- -- -- -- -- -- -- -- -- -- -- -- 6.8 -- -- 0.09 4.0 -- 10 25 100 -100 50 15 18 20 30 35 25 -- V V/C V S( ) A
Test Conditions
VGS = 0V, ID = 1.0mA Reference to 25C, ID = 1.0mA VGS = 12V, ID = 12A A VDS = VGS, ID = 1.0mA VDS = 15V, IDS = 12A A VDS= 120V ,VGS=0V VDS = 120V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS =12V, ID = 19A VDS = 75V VDD = 75V, ID = 19A V GS =12V, RG = 7.5
IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
nA nC
ns
nH
Ciss Coss Crss Rg
Input Capacitance Output Capacitance Reverse Transfer Capacitance Internal Gate Resistance
-- -- -- --
1540 240 5.2 1.1
-- -- -- --
pF
Measured from Drain lead (6mm / 0.25in. from package) to Source lead (6mm /0.25in. from package) VGS = 0V, VDS = 25V f = 1.0MHz f = 1.0MHz, open drain
Source-Drain Diode Ratings and Characteristics
Parameter
IS ISM VSD trr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min Typ Max Units
-- -- -- -- -- -- 19 -- 76 -- 1.2 -- 300 -- 2.6
Test Conditions
A
V ns C Tj = 25C, IS = 19A, VGS = 0V A Tj = 25C, IF = 19A, di/dt 100A/s VDD 25V A
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC RthJA Junction-to-Case Junction-to-Ambient
Min Typ Max Units
-- -- -- -- 1.67 80
C/W
Test Conditions
Typical Socket Mount
Note: Corresponding Spice and Saber models are available on International Rectifier Web site. For footnotes refer to the last page
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Radiation Characteristics Pre-Irradiation
IRHYS67134CM
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25C, Post Total Dose Irradiation AA
Parameter
BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance (TO-3) Static Drain-to-Source On-State Resistance (Low Ohmic TO-257) Diode Forward Voltage Up to 300K Rads (Si)
Min
150 2.0 -- -- -- -- -- --
Max
Units
V nA A V
Test Conditions
VGS = 0V, ID = 1.0mA VGS = VDS, ID = 1.0mA VGS = 20V VGS = -20V VDS=120V, VGS=0V VGS = 12V, ID = 12A VGS = 12V, ID = 12A VGS = 0V, ID = 19A
-- 4.0 100 -100 10 0.092 0.090 1.2
Part numbers IRHYS67134CM and IRHYS63134CM
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Tables for Single Event Effect Safe Operating Area
Ion Kr
LET = 39 MeV/(mg/cm2) Energy = 312 MeV Range = 39 m VGS Bias VDS Bias (Volts) (Volts) 0 150 -5 150 -10 150 -15 150 -20 150
Ion Xe
LET = 59 MeV/(mg/cm2) Energy = 825 MeV Range = 66 m VGS Bias VDS Bias (Volts) (Volts) 0 150 -5 150 -9 150 -10 140 -11 50 -15 40
180 150 120 VDS 90 60 30 0 0 -5 -10 VGS -15 -20 Kr Xe Au
Ion Au
LET = 90 MeV/(mg/cm2) Energy = 1480 MeV Range = 80 m VGS Bias VDS Bias (Volts) (Volts) 0 50 -5 50 -10 30
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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IRHYS67134CM
Pre-Irradiation
1000
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
100
VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP
1000
VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP
100
10
10 5.0V
1
5.0V 60s PULSE WIDTH Tj = 25C
1 60s PULSE WIDTH Tj = 150C 0.1 0.1 1 10 100
0.1 0.1 1 10 100 VDS, Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
3.0
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID = 19A
2.5
ID, Drain-to-Source Current (A)
T J = 150C
2.0
T J = 25C 10
1.5
1.0
VDS = 50V 60s PULSE WIDTH 15 1.0 5 6 7 8 9 10 VGS, Gate-to-Source Voltage (V)
0.5
VGS = 12V
0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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Pre-Irradiation
IRHYS67134CM
2800 2400 2000 1600 1200 800 400 0 1
VGS, Gate-to-Source Voltage (V)
100KHz VGS = 0V, f = 1 MHz C iss = C gs + C gd, C ds SHORTED C rss = C gd
C oss = C ds + C gd
20 ID = 19A 16
6 VDS = 120V VDS = 75V VDS = 30V
C, Capacitance (pF)
Ciss
12
Coss
8
Crss
4 FOR TEST CIRCUIT SEE FIGURE 13 0 0 10 20 30 40 50 60
10
100
VDS, Drain-to-Source Voltage (V)
QG, Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
1000 OPERATION IN THIS AREA LIMITED BY R DS(on) 100
10
TJ = 150C
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
T J = 25C
10
100s
1 Tc = 25C Tj = 150C Single Pulse 1 10 100
1
1ms 10ms
VGS = 0V 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD , Source-to-Drain Voltage (V)
0.1
1000
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
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IRHYS67134CM
Pre-Irradiation
20
VGS
VDS
RD
16
ID, Drain Current (A)
RG VGS
Pulse Width 1 s Duty Factor 0.1 %
D.U.T.
+
-V DD
12
8
Fig 10a. Switching Time Test Circuit
4
VDS 90%
0 25 50 75 100 125 150
10% VGS
td(on) tr t d(off) tf
T C , Case Temperature (C)
Fig 9. Maximum Drain Current Vs. Case Temperature
Fig 10b. Switching Time Waveforms
10
Thermal Response ( Z thJC )
1
D = 0.50 0.20 0.10
0.1
0.05 0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE )
P DM t1 t2
0.01
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc
0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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Pre-Irradiation
IRHYS67134CM
120
EAS , Single Pulse Avalanche Energy (mJ)
15V
100
TOP BOTTOM
VDS
L
DRIVER
80
ID 19A 12A 8.5A
RG
D.U.T.
IAS tp
60
+ - VDD
A
VGS 20V
40
0.01
Fig 12a. Unclamped Inductive Test Circuit
20
0 25 50 75 100 125 150
V(BR)DSS tp
Starting T J , Junction Temperature (C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
12 V
QGS
QGD
VGS
3mA
D.U.T.
+ V - DS
VG
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
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IRHYS67134CM
Pre-Irradiation
A Pulse width 300 s; Duty Cycle 2% A Total Dose Irradiation with VGS Bias.
Footnotes:
A Repetitive Rating; Pulse width limited by
maximum junction temperature. A VDD = 25V, starting TJ = 25C, L= 0.37mH Peak IL = 19A, VGS = 12V A ISD 19A, di/dt 570A/s, VDD 150V, TJ 150C 12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. 120 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A.
A Total Dose Irradiation with VDS Bias.
Case Outline and Dimensions -- Low-Ohmic TO-257AA
A 10.66 [.420] 10.42 [.410] 3X O 3.81 [.150] 3.56 [.140] 5.08 [.200] 4.83 [.190] 0.13 [.005] 1.14 [.045] 0.89 [.035]
13.63 [.537] 13.39 [.527] 1 2 3
16.89 [.665] 16.39 [.645]
10.92 [.430] 10.42 [.410]
B
C 15.88 [.625] 12.70 [.500]
0.71 [.028] MAX.
2.54 [.100] 2X
3X O
0.88 [.035] 0.64 [.025] CA B
3.05 [.120]
O 0.50 [.020]
NOT ES : 1. 2. 3. 4. DIMENS IONING & T OLERANCING PER ANS I Y14.5M-1994. CONT ROLLING DIMENS ION: INCH. DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ]. OUT LINE CONFORMS T O JEDEC OUT LINE T O-257AA.
LEAD ASSIGNMENTS 1 = DRAIN 2 = SOURCE 3 = GATE
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 02/2005
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